A GaAs-based Optical Nanoelectromechanical Device
نویسنده
چکیده
Optical systems are being developed to reach the functionality and large-scale integration of electronic systems. Strides are being made to develop an on-chip optical system by designing and fabricating an Optical NanoElectroMechanical, ONEM, device structure based in a gallium arsenide material system. Gallium arsenide, a III-V compound semiconductor, was chosen due to its high-refractive index contrast when combined with oxidized AlAs. GaAs was specifically chosen over other III-V materials due to its comparable mechanical integrity to silicon-based electromechanical devices. The ONEM project will addresses several fabrication issues: nanometer-sized feature fabrication, optical wave guiding and mode-matching, and electronic and mechanical interactions in a GaAs material system.
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